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go athena
#Grid
line x loc=0 spac=0.1
line x loc=0.3 spac=0.02
line x loc=1 spac=0.1
line y loc=0 spac=0.03
line y loc=0.2 spac=0.02
line y loc=1 spac=0.1
#init two.d
#initial silicon structure
init silicon c.boron=3.0E14 orientation=100 two.d
#GATE OXIDE DEPOSITION
DEPOSIT OXIDE THICK=0.02 DIVISIONS=2
DEPOSIT POLY THICK=0.5 C.PHOSPHOR=5.0E19 DIVISIONS=10  \
DY=0.02 YDY=0.2
#POLY DEFINITION
ETCH POLY START X=0.2 Y=-1
ETCH CONT X=0.4 Y=1
ETCH CONT X=2 Y=1
ETCH DONE X=2 Y=-1
# CLEAN GATE OXIDE
ETCH OXIDE DRY THICK=0.03
#SPACER DEPOSITION
DEPOSIT OXIDE THICK=0.2 DIVISIONS=8
#SPACER ETCHING
ETCH OXIDE DRY THICK=0.23
#RELAXLOWER HALF OF THE STRUCTURE
RELAX X.MIN=0.00 X.MAX=1.00 Y.MIN=0.3 Y.MAX=1.00 DIR.X=T DIR.Y=T
#mirror the structure at its boundary
STRUCT MIRROR LEFT

# STRETCH TO 1.5 MICROS
# STRETCH LENGTH=1.5 POLY SNAP DIVISION=10
# ATTRIBUTE AN ELECTRODE TO ANY METAL,SILICIDE, OR POLYSILICON
REGION
DEPOSIT ALUMIN THICK=0.1
ETCH ALUMIN START X=-0.8 Y=-20
ETCH CONT X=-0.8 Y=20
ETCH CONT X=0.8 Y=20
ETCH DONE X=0.8 Y=-20



struct outfile=fig2-27metal-40103125.str
tonyplot fig2-27metal-40103125.str